Solution-based deposition approaches for the oxygen-free synthesis of chalcogenide perovskites

Researchers at Purdue University have developed a new method to synthesize chalcogenide perovskites. Chalcogenide perovskites have both excellent optoelectronic properties, including a direct bandgap and high absorption coefficient, and a high intrinsic stability. This makes them an enticing class of materials for semiconductor applications, including photovoltaics. However, chalcogenide perovskite synthesis is challenging, generally requiring high temperatures (often > 800 degrees Celsius), negatively affecting the structure of the contact layer between the perovskite and the semiconductor substrate. Purdue researchers have developed a method that involves solution-phase delivery of at least one of the metals that forms the perovskite and a lower temperature treatment step. This method is the first to successfully synthesize a chalcogenide perovskite film that is compatible with semiconductor applications.

Technology Validation: The chalcogenide perovskite synthesized by the researchers showed the same peaks in the X-ray diffraction (XRD) and Raman spectra as the standard.

Advantages:

- lower temperature synthesis

- compatible with semiconductor applications

Applications:

- PV cells

- LEDs

- water-splitting devices

- field effect transistors

TRL: 3

Intellectual Property:

Keywords: Barium zirconium sulfide, Chalcogenide perovskite, Chemical Engineering, Distorted perovskite, Ruddlesden-Popper, Semiconductor materials, Solution-processed