General Cascade Field Effect Transistor Concept

A new cascade field effect transistor concept enables the fabrication of smaller, faster, and more energy-efficient logic devices using existing materials and dimensions without restriction to TFET technology.
Technology No. 2018-KUBI-68297

The Cascade Tunneling Field Effect Transistor (CasTFET) is a transistor concept that combines the tunneling field effect transistor (TFET) with the cascade system. One issue with the existing transistor concept is that it requires a TFET device, thus offering only limited application space. There is a need for a new technology that expands the CasTFET concept and is not restricted to TFET devices and the materials common to them.

Researchers at Purdue University have developed a general cascade field effect transistor concept. This concept will help logic device designers who want to fabricate smaller, faster, and more energy efficient transistors. By introducing an additional and new way of switching the current in a transistor, this technology will allow for the usage of similar or identical materials and device dimensions that are currently used.

Advantages:

-No restriction to TFET devices

-High market value

Potential Applications:

-Transistors

-Circuits

TRL: 3

Intellectual Property:

Provisional-Patent, 2018-06-08, United States | Utility Patent, 2019-06-07, United States | CON-Patent, 2022-06-13, United States

Keywords: Cascade Field Effect Transistor, CasFET, CasTFET, Tunneling Field Effect Transistor, TFET, Transistor concept, logic device, smaller transistors, faster transistors, energy efficient transistors, circuits, switching current, Cascade System, Cascade Tunneling Field Effect Transistor, CasTFET, Circuits, Electrical Engineering, TFET, Transistors, Tunneling Field Effect Transistor

  • expand_more mode_edit Authors (2)
    James Anthony Charles
    Tillmann C Kubis
  • expand_more cloud_download Supporting documents (1)
    Product brochure
    General Cascade Field Effect Transistor Concept.pdf
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